The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Feb. 02, 2009
Daewon Yang, Hopewell Junction, NY (US);
Woo-hyeong Lee, Poughquag, NY (US);
Tai-chi Su, Woodbury, CT (US);
Yun-yu Wang, Poughquag, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
Woo-Hyeong Lee, Poughquag, NY (US);
Tai-chi Su, Woodbury, CT (US);
Yun-Yu Wang, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the invention provide a method of forming a compressive stress nitride film overlying a plurality of p-type field effect transistor gate structures produced on a substrate through a high-density plasma deposition process. Embodiments include generating an environment filled with high-density plasma using source gases of at least silane, argon and nitrogen; biasing the substrate to a high frequency power of varying density, in a range between 0.8 W/cmand 5.0 W/cm; and depositing the high-density plasma to the plurality of gate structures to form the compressive stress nitride film.