The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Nov. 29, 2007
Francis Ko, Taichung, TW;
Jean Wang, Hsin Chu, TW;
Henry Lo, Hsinchu, TW;
Chi-chun Hsieh, Tongluo Township, TW;
Amy Wang, Taipei, TW;
Francis Ko, Taichung, TW;
Jean Wang, Hsin Chu, TW;
Henry Lo, Hsinchu, TW;
Chi-Chun Hsieh, Tongluo Township, TW;
Amy Wang, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method is disclosed for controlling the sheet resistance of copper trenches formed on semiconductor wafers. The method includes forming a plurality of copper-filled trenches on a wafer, measuring the sheet resistance of each of the plurality of copper-filled trenches, and comparing the measured sheet resistance values to a predetermined sheet resistance value. Photolithography steps performed on subsequent wafers are adjusted according to a difference between the measured sheet resistance values and the predetermined value. In one embodiment, this adjustment takes the form of adjusting a photolithographic extension exposure energy to thereby adjust the cross-section of the resulting trenches.