The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Dec. 22, 2009
Moris Kori, Palo Alto, CA (US);
Alfred W. Mak, Union City, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Lawrence Chung-lai Lei, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Moris Kori, Palo Alto, CA (US);
Alfred W. Mak, Union City, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Lawrence Chung-Lai Lei, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.