The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2010

Filed:

Jan. 17, 2008
Applicants:

Joon-min Park, Dongjak-gu, KR;

Sang-beom Kang, Hwaseong-si, KR;

Hyung-rok OH, Yongin-si, KR;

Woo-yeong Cho, Suwon-si, KR;

Inventors:

Joon-Min Park, Dongjak-gu, KR;

Sang-Beom Kang, Hwaseong-si, KR;

Hyung-Rok Oh, Yongin-si, KR;

Woo-Yeong Cho, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell of a resistive semiconductor memory device, a resistive semiconductor memory device having a three-dimensional stack structure, and related methods are provided. The memory cell of a resistive semiconductor memory device includes a twin cell, wherein the twin cell stores data values representing one bit of data. The twin cell includes a main unit cell connected to a main bit line and a word line, and a sub unit cell connected to a sub bit line and the word line. Also, the main unit cell includes a first variable resistor and a first diode, and the sub unit cell includes a second variable resistor and a second diode.


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