The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7843067 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 30, 2010

Filed:

Mar. 24, 2008
Applicants:

John M. Cotte, New Fairfield, CT (US);

Balasubramanian Haran, Watervliet, NY (US);

Christopher C. Parks, Poughkeepsie, NY (US);

Xiaoyan Shao, Yorktown Heights, NY (US);

Eva E. Simonyi, Bronx, NY (US);

Inventors:

John M. Cotte, New Fairfield, CT (US);

Balasubramanian Haran, Watervliet, NY (US);

Christopher C. Parks, Poughkeepsie, NY (US);

Xiaoyan Shao, Yorktown Heights, NY (US);

Eva E. Simonyi, Bronx, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure relates to a microelectronic structure and the manufacture of the microelectronic structure. Specifically, the disclosure relates to an interconnect barrier layer between a rhodium contact structure and a copper interconnect structure in a microelectronic structure. The microelectronic structure provides for low resistance in microelectronic devices.


Find Patent Forward Citations

Cotte, John. (2010). Method and structure of integrated rhodium contacts with copper interconnects (U.S. Patent No. 7843067). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7843067

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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