The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Apr. 28, 2008
Thomas Gutt, Taufkirchen, DE;
Frank Umbach, Munich, DE;
Hans Peter Felsl, Munich, DE;
Manfred Pfaffenlehner, Munich, DE;
Franz-josef Niedernostheide, Muenster, DE;
Holger Schulze, Villach, AT;
Thomas Gutt, Taufkirchen, DE;
Frank Umbach, Munich, DE;
Hans Peter Felsl, Munich, DE;
Manfred Pfaffenlehner, Munich, DE;
Franz-Josef Niedernostheide, Muenster, DE;
Holger Schulze, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.