The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Jul. 29, 2009
Cha-won Koh, Yongin-si, KR;
Sang-gyun Woo, Yonging-si, KR;
Gi-sung Yeo, Seoul, KR;
Myoung-ho Jung, Yonging-si, KR;
Cha-Won Koh, Yongin-si, KR;
Sang-Gyun Woo, Yonging-si, KR;
Gi-Sung Yeo, Seoul, KR;
Myoung-Ho Jung, Yonging-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.