The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Feb. 28, 2007
Doo-youl Lee, Seoul, KR;
Suk-joo Lee, Yongin-si, KR;
Yool Kang, Yongin-si, KR;
Han-ku Cho, Seongnam-si, KR;
Chang-jin Kang, Seongnam-si, KR;
Jae-ok Yoo, Suwon-si, KR;
Sung-chan Park, Seoul, KR;
Doo-youl Lee, Seoul, KR;
Suk-joo Lee, Yongin-si, KR;
Yool Kang, Yongin-si, KR;
Han-ku Cho, Seongnam-si, KR;
Chang-jin Kang, Seongnam-si, KR;
Jae-ok Yoo, Suwon-si, KR;
Sung-chan Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.