The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2010

Filed:

Dec. 12, 2008
Applicants:

Zhigang Wang, Sunnyvale, CA (US);

Fethi Dhaoui, Patterson, CA (US);

Michael Sadd, Austin, TX (US);

John Mccollum, Saratoga, CA (US);

Frank Hawley, Campbell, CA (US);

Inventors:

Zhigang Wang, Sunnyvale, CA (US);

Fethi Dhaoui, Patterson, CA (US);

Michael Sadd, Austin, TX (US);

John McCollum, Saratoga, CA (US);

Frank Hawley, Campbell, CA (US);

Assignee:

Actel Corporation, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory cell includes a p-channel flash transistor having a source, a drain, a floating gate, and a control gate, an n-channel flash transistor having a source, a drain coupled to the drain of the p-channel flash transistor, a floating gate, and a control gate, a switch transistor having a gate coupled to the drains of the p-channel flash transistor and the n-channel flash transistor, a source, and a drain, and an n-channel assist transistor having a drain coupled to the drains of the p-channel flash transistor and the n-channel flash transistor, a source coupled to a fixed potential, and a gate.


Find Patent Forward Citations

Loading…