The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Mar. 31, 2008
Sami K. Hahto, Nashua, NH (US);
Richard Goldberg, Boston, MA (US);
Edward Mcintyre, Franklin, MA (US);
Thomas N. Horsky, Boxborough, MA (US);
Sami K. Hahto, Nashua, NH (US);
Richard Goldberg, Boston, MA (US);
Edward McIntyre, Franklin, MA (US);
Thomas N. Horsky, Boxborough, MA (US);
SemEquip, Inc., North Billerica, MA (US);
Abstract
An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.