The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Mar. 17, 2009
Jin-il Lee, Gyeonggi-do, KR;
Sung-lae Cho, Gyeonggi-do, KR;
Ik-soo Kim, Gyeonggi-do, KR;
Hye-young Park, Gyeonggi-do, KR;
Do-hyung Kim, Gyeonggi-do, KR;
Dong-hyun Im, Seoul, KR;
Jin-Il Lee, Gyeonggi-do, KR;
Sung-Lae Cho, Gyeonggi-do, KR;
Ik-Soo Kim, Gyeonggi-do, KR;
Hye-Young Park, Gyeonggi-do, KR;
Do-Hyung Kim, Gyeonggi-do, KR;
Dong-Hyun Im, Seoul, KR;
Abstract
Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer.