The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Dec. 15, 2009
Hui-lin Chang, Hsin-Chu, TW;
Hung Chun Tsai, Hsin-Chu, TW;
Yung-cheng LU, Taipei, TW;
Syun-ming Jang, Hsin-Chu, TW;
Hui-Lin Chang, Hsin-Chu, TW;
Hung Chun Tsai, Hsin-Chu, TW;
Yung-Cheng Lu, Taipei, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, the cap layer may be formed by an in-situ deposition process in which a process gas comprising germanium, arsenic, tungsten, or gallium is introduced, thereby forming a copper-metal cap layer. In another embodiment, a copper-metal silicide cap is provided. In this embodiment, silane is introduced before, during, or after a process gas is introduced, the process gas comprising germanium, arsenic, tungsten, or gallium. Thereafter, an optional etch stop layer may be formed, and a second dielectric layer may be formed over the etch stop layer or the first dielectric layer.