The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Aug. 27, 2008
Kazuyuki Hayashi, Chiyoda-ku, JP;
Kazuo Kadowaki, Chiyoda-ku, JP;
Takashi Sugiyama, Chiyoda-ku, JP;
Masaki Mikami, Chiyoda-ku, JP;
Kazuyuki Hayashi, Chiyoda-ku, JP;
Kazuo Kadowaki, Chiyoda-ku, JP;
Takashi Sugiyama, Chiyoda-ku, JP;
Masaki Mikami, Chiyoda-ku, JP;
Asahi Glass Company, Limited, Tokyo, JP;
Abstract
To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank. A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.