The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jul. 17, 2007
Ryoji Nishio, Kudamatsu, JP;
Ken Yoshioka, Hikari, JP;
Saburou Kanai, Hikari, JP;
Tadamitsu Kanekiyo, Kudamatsu, JP;
Hideki Kihara, Kudamatsu, JP;
Koji Okuda, Kudamatsu, JP;
Ryoji Nishio, Kudamatsu, JP;
Ken Yoshioka, Hikari, JP;
Saburou Kanai, Hikari, JP;
Tadamitsu Kanekiyo, Kudamatsu, JP;
Hideki Kihara, Kudamatsu, JP;
Koji Okuda, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A RF bias voltage is adjusted based on the result of comparison by the comparison circuit.