The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Jun. 29, 2005
Shang-chih Chen, Jiadong Township, TW;
Shih-hsieng Huang, Renwu Township, TW;
Chih-hao Wang, Hsin-Chu, TW;
Shang-Chih Chen, Jiadong Township, TW;
Shih-Hsieng Huang, Renwu Township, TW;
Chih-Hao Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An N-MOS and/or P-MOS device having enhanced performance such as an FET suitable for use in a CMOS circuit. The device comprises both an 'L-like' shaped layer or spacer on the side walls of a gate structure as well as a CESL (contact-etch stop layer) that covers the gate structure and surrounding substrate to induce increase tensile stresses in the N-MOS device and increased compressive stresses in the P-MOS device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile