The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

Jun. 20, 2007
Applicants:

Katsuhiko Anbai, Oshu, JP;

Masayuki Oikawa, Oshu, JP;

Tetsuya Shibata, Nirasaki, JP;

Yuichi Tani, Oshu, JP;

Inventors:

Katsuhiko Anbai, Oshu, JP;

Masayuki Oikawa, Oshu, JP;

Tetsuya Shibata, Nirasaki, JP;

Yuichi Tani, Oshu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 μm depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.


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