The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Nov. 28, 2006
Andy Wei, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Jan Hoentschel, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Andy Wei, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Jan Hoentschel, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
By forming a portion of a PN junction within strained silicon/germanium material in SOI transistors with a floating body architecture, the junction leakage may be significantly increased, thereby reducing floating body effects. The positioning of a portion of the PN junction within the strained silicon/germanium material may be accomplished on the basis of implantation and anneal techniques, contrary to conventional approaches in which in situ doped silicon/germanium is epitaxially grown so as to form the deep drain and source regions. Consequently, high drive current capability may be combined with a reduction of floating body effects.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile