The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2010

Filed:

Oct. 22, 2008
Applicants:

Ganesh Balasubramanian, Sunnyvale, CA (US);

Juan Carlos Rocha-alvarez, Sunnyvale, CA (US);

Tom K. Cho, Palo Alto, CA (US);

Daemian Raj, Sunnyvale, CA (US);

Inventors:

Ganesh Balasubramanian, Sunnyvale, CA (US);

Juan Carlos Rocha-Alvarez, Sunnyvale, CA (US);

Tom K. Cho, Palo Alto, CA (US);

Daemian Raj, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the method for processing a substrate includes delivering a processing gas into a chemical vapor deposition chamber through a first gas pathway that includes flow through a first plurality of apertures in a blocker plate, the blocker plate creating a pressure drop of at least approximately 0.8 torr thereacross, reacting the processing gas to deposit a material on a substrate surface, removing the substrate from the chamber, delivering a cleaning gas into the chamber through a second gas pathway around the blocker plate bypassing the blocker plate and through a second plurality of apertures formed in the blocker plate, and reacting the cleaning gases with deposits within the chamber to etch the deposits from the chamber.


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