The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Dec. 20, 2007
Applicants:
Morgan Evans, Manchester, MA (US);
Norman E. Hussey, Middleton, MA (US);
Steven R. Walther, Andover, MA (US);
Rekha Padmanabhan, Peabody, MA (US);
Inventors:
Morgan Evans, Manchester, MA (US);
Norman E. Hussey, Middleton, MA (US);
Steven R. Walther, Andover, MA (US);
Rekha Padmanabhan, Peabody, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61N 5/00 (2006.01); G21G 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An approach for predicting dose repeatability in an ion implantation is described. In one embodiment, an ion source is tuned to generate an ion beam with desired beam current. Beam current measurements are obtained from the tuned ion beam. The dose repeatability is predicted for the ion implantation as a function of the beam current measurements.