The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jul. 20, 2005
Applicants:
Yin-shen Chu, Taichung, TW;
Chia-piao Lee, Yongkang, TW;
Inventors:
Yin-Shen Chu, Taichung, TW;
Chia-Piao Lee, Yongkang, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of preventing photoresist scum formation for etch processes for patterning material layers of semiconductor device material layers are disclosed. A treatment of Nand Ois used to prevent the formation of photoresist scum. The treatment may be performed in-situ, and may be performed during the etch process, after the etch process, or both. The treatment is particularly beneficial when implemented during the patterning of low dielectric constant material layers, and when used for the formation of isolated via patterns.