The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Mar. 27, 2008
Lee Wee Teo, Singapore, SG;
Chung Foong Tan, Singapore, SG;
Alain Chan, Ap Lei Chau, HK;
Elgin Kiok Boone Quek, Singapore, SG;
Lee Wee Teo, Singapore, SG;
Chung Foong Tan, Singapore, SG;
Alain Chan, Ap Lei Chau, HK;
Elgin Kiok Boone Quek, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
The electrical performance enhancing effects of inducing strain in semiconductor devices is made substantially uniform across a substrate having a varying population density of device components by selectively spacing apart the strain-inducing structures from the effected regions of the semiconductor devices depending upon the population density of device components. Differing separation distances are obtained by selectively forming sidewall spacers on device components, such as MOS transistor gate electrodes, in which the sidewall spacers have a relatively small width in regions having a relatively high density of device components, and a relatively larger width in regions having a relatively low density of device components. By varying the separation distance of strain-inducing structures from the effected components, uniform electrical performance is obtained in the various components of the devices in an integrated circuit regardless of the component population density.