Method for making a semiconductor device including shallow trench isolation (sti) regions with maskless superlattice deposition following sti formation and related structures

Abstract

A semiconductor device may include a semiconductor substrate having a surface, a shallow trench isolation (STI) region in the semiconductor substrate and extending above the surface thereof, and a superlattice layer adjacent the surface of the semiconductor substrate and comprising a plurality of stacked groups of layers. More particularly, each group of layers of the superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Moreover, at least some atoms from opposing base semiconductor portions may be chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer. The semiconductor device may further include a lateral spacer between the superlattice layer and the STI region and which may include a lower non-monocrystalline semiconductor superlattice portion and an upper dielectric portion.