The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Nov. 06, 2008
Vadim Yevgenyevich Banine, Helmond, NL;
Vladimir Vitalevitch Ivanov, Moscow, RU;
Johannes Hubertus Josephina Moors, Helmond, NL;
Bastiaan Theodoor Wolschrijn, Abcoude, NL;
Derk Jan Wilfred Klunder, Geldrop, NL;
Maarten Marinus Johannes Wilhelmus Van Herpen, Heesch, NL;
Vadim Yevgenyevich Banine, Helmond, NL;
Vladimir Vitalevitch Ivanov, Moscow, RU;
Johannes Hubertus Josephina Moors, Helmond, NL;
Bastiaan Theodoor Wolschrijn, Abcoude, NL;
Derk Jan Wilfred Klunder, Geldrop, NL;
Maarten Marinus Johannes Wilhelmus Van Herpen, Heesch, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.