The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Jun. 06, 2000
Volker Becker, Marxzell, DE;
Franz Laermer, Stuttgart, DE;
Andrea Schilp, Schwäbisch Gmünd, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method and a device suitable for implementing this method for etching a substrate (), a silicon body in particular, using an inductively coupled plasma () are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source (), the alternating field generating an inductively coupled plasma () of reactive particles in a reactor (). The inductively coupled plasma () arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma () via the radio-frequency electromagnetic alternating field with the ICP source () is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma () as a pulsed radio-frequency power. In addition, the pulsed plasma power can be combined or correlated with a pulsed magnetic field and/or a pulsed substrate electrode power.