The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2010

Filed:

Oct. 19, 2007
Applicants:

Christopher D. Bencher, San Jose, CA (US);

Keiji Horioka, Tokyo, JP;

Inventors:

Christopher D. Bencher, San Jose, CA (US);

Keiji Horioka, Tokyo, JP;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.

Published as:
EP1998363A2; US2008299776A1; KR20080106063A; JP2009004769A; TW200905729A; EP1998363A3; US7807578B2; KR100991295B1; US2011008969A1; CN103488041A; JP5385551B2; TWI471903B;

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