The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Jan. 13, 2005
Yasuo Kobayashi, Nirasaki, JP;
Kenichi Nishizawa, Kikuyo-Machi, JP;
Takatoshi Kameshima, Nirasaki, JP;
Takaaki Matsuoka, Tokyo-To, JP;
Yasuo Kobayashi, Nirasaki, JP;
Kenichi Nishizawa, Kikuyo-Machi, JP;
Takatoshi Kameshima, Nirasaki, JP;
Takaaki Matsuoka, Tokyo-To, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A dielectric film () made of CF is deposited on a substrate. A protective layer comprising an SiCN film () is formed on the dielectric film (). A film () serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film () is deposited on the dielectric film () by a plasma containing active species of silicon and carbon, and thereafter the SiCN film () is deposited on the SiC film () by a plasma containing active species of silicon, carbon, and nitrogen.