The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Feb. 04, 2008
Kazuhiro Kubota, Nirasaki, JP;
Naotsugu Hoshi, Nirasaki, JP;
Yuki Chiba, Albany, NY (US);
Ryuichi Asako, Nirasaki, JP;
Kazuhiro Kubota, Nirasaki, JP;
Naotsugu Hoshi, Nirasaki, JP;
Yuki Chiba, Albany, NY (US);
Ryuichi Asako, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A processing method includes a gas having a Si—CHbond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CHbond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.