The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Oct. 17, 2005
Osamu Tonomura, Kokubunji, JP;
Norikatsu Takaura, Tokyo, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Nozomu Matsuzaki, Kodaira, JP;
Osamu Tonomura, Kokubunji, JP;
Norikatsu Takaura, Tokyo, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Nozomu Matsuzaki, Kodaira, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A technique capable of improving speed of a set operation, which controls writing rate in a semiconductor device including a memory cell using a phase-change material. The technique uses means for setting a set-pulse voltage to be applied to the phase-change material to have two steps: the first-step voltage sets a temperature of the phase-change memory to a temperature at which the fastest nucleation is obtained; and the second pulse sets the temperature to a temperature at which the fastest crystal growth is obtained, thereby obtaining solid-phase growth of the phase-change material without melting. Moreover, the technique uses means for controlling the two-step voltage applied to the phase-change memory by a two-step voltage applied to a word line capable of reducing the drain current variation.