The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Oct. 09, 2008
Applicants:
Takeo Ushiki, Tokyo, JP;
Keizo Yamada, Tokyo, JP;
Yohsuke Itagaki, Tokyo, JP;
Tohru Tsujide, Tokyo, JP;
Inventors:
Takeo Ushiki, Tokyo, JP;
Keizo Yamada, Tokyo, JP;
Yohsuke Itagaki, Tokyo, JP;
Tohru Tsujide, Tokyo, JP;
Assignee:
TOPCON Corporation, Itabashi-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); G01R 31/305 (2006.01); G01R 31/26 (2006.01); G01N 27/00 (2006.01); G01N 23/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.