The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Aug. 28, 2007
Takehiko Fujita, Nirasaki, JP;
Jun Ogawa, Nirasaki, JP;
Shigeru Nakajima, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Takehiko Fujita, Nirasaki, JP;
Jun Ogawa, Nirasaki, JP;
Shigeru Nakajima, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.