The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Aug. 25, 2006
Toshio Saito, Akiruno, JP;
Akira Otaguro, Ome, JP;
Manabu Otake, Hamura, JP;
Yoshiya Takahira, Musashimurayama, JP;
Namio Katagiri, Hamura, JP;
Nobuaki Miyakawa, Wako, JP;
Toshio Saito, Akiruno, JP;
Akira Otaguro, Ome, JP;
Manabu Otake, Hamura, JP;
Yoshiya Takahira, Musashimurayama, JP;
Namio Katagiri, Hamura, JP;
Nobuaki Miyakawa, Wako, JP;
Hitachi, Ltd., Tokyo, JP;
Honda Motor Co., Ltd., Tokyo, JP;
Abstract
When a tungsten film () is embedded inside of a conductive groove (A) formed in a wafer (W) and a silicon oxide film () thereon and having a high aspect ratio, film formation and etch back of the tungsten film () are successively performed in a chamber of the same apparatus, therefore, a film thickness of the tungsten film () deposited in one film formation step is made to be thin. Whereby problems, such as exfoliation of the tungsten film (), generation of micro-cracks, and occurrence of warpage and cracks of the wafer (W), are avoided.