The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Feb. 08, 2010
Hsiang-ying Wang, Chia-Yi Hsien, TW;
Chin-cheng Chien, Tainan Hsien, TW;
Tsai-fu Hsiao, Tainan, TW;
Ming-yen Chien, Kao-Hsiung Hsien, TW;
Chao-chun Chen, Kao-Hsiung, TW;
Hsiang-Ying Wang, Chia-Yi Hsien, TW;
Chin-Cheng Chien, Tainan Hsien, TW;
Tsai-Fu Hsiao, Tainan, TW;
Ming-Yen Chien, Kao-Hsiung Hsien, TW;
Chao-Chun Chen, Kao-Hsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO.