The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Jun. 12, 2006
Jong Shik Yoon, San Diego, CA (US);
Amitava Chatterjee, Plano, TX (US);
Kayvan Sadra, Addison, TX (US);
Shaoping Tang, Plano, TX (US);
Jong Shik Yoon, San Diego, CA (US);
Amitava Chatterjee, Plano, TX (US);
Kayvan Sadra, Addison, TX (US);
Shaoping Tang, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Methods are disclosed for forming an SRAM cell having symmetrically implanted active regions and reduced cross-diffusion therein. One method comprises patterning a resist layer overlying a semiconductor substrate to form resist structures about symmetrically located on opposite sides of active regions of the cell, implanting one or more dopant species using a first implant using the resist structures as an implant mask, rotating the semiconductor substrate relative to the first implant by about 180 degrees, and implanting one or more dopant species into the semiconductor substrate with a second implant using the resist structures as an implant mask. A method of performing a symmetric angle implant is also disclosed to provide reduced cross-diffusion within the cell, comprising patterning equally spaced resist structures on opposite sides of the active regions of the cell to equally shadow laterally opposed first and second angled implants.