The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2010

Filed:

Mar. 05, 2008
Applicants:

Ji-myoung Lee, Yongin-si, KR;

Min-sang Kim, Seoul, KR;

Eun-jung Yun, Seoul, KR;

Sung-young Lee, Yongin-si, KR;

In-hyuk Choi, Seoul, KR;

Inventors:

Ji-Myoung Lee, Yongin-si, KR;

Min-Sang Kim, Seoul, KR;

Eun-Jung Yun, Seoul, KR;

Sung-Young Lee, Yongin-si, KR;

In-Hyuk Choi, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multibit electro-mechanical memory device and a method of manufacturing the same include a substrate, a bit line on the substrate; a lower word line and a trap site isolated from the bit line, a pad electrode isolated from a sidewall of the trap site and the lower word line and connected to the bit line, a cantilever electrode suspended over a lower void in an upper part of the trap site, and connected to the pad electrode and curved by an electrical field induced by a charge applied to the lower word line, a contact part for concentrating a charge induced from the cantilever electrode thereon in response to the charge applied from the lower word line and the trap site, the contact part protruding from an end part of the cantilever electrode, and an upper word line formed with an upper void above the cantilever electrode.


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