The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Oct. 31, 2008
Shaoping LI, Naperville, IL (US);
Insik Jin, Eagan, MN (US);
Zheng Gao, Savage, MN (US);
Eileen Yan, Edina, MN (US);
Kaizhong Gao, Eden Prairie, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Song Xue, Edina, MN (US);
Shaoping Li, Naperville, IL (US);
Insik Jin, Eagan, MN (US);
Zheng Gao, Savage, MN (US);
Eileen Yan, Edina, MN (US);
Kaizhong Gao, Eden Prairie, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Song Xue, Edina, MN (US);
Seagate Technology, LLC, Scotts Valley, CA (US);
Abstract
A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.