The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Feb. 07, 2008
Bomy Chen, Cupertino, CA (US);
Ya-fen Lin, Santa Clara, CA (US);
Zhitang Song, Shanghai, CN;
Songlin Feng, Shanghai, CN;
Bomy Chen, Cupertino, CA (US);
Ya-Fen Lin, Santa Clara, CA (US);
Zhitang Song, Shanghai, CN;
Songlin Feng, Shanghai, CN;
Silicon Storage Technology, Inc., Sunnyvale, CA (US);
Abstract
A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).