The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2010

Filed:

Apr. 25, 2006
Applicants:

Zhilin Huang, San Jose, CA (US);

Siyi LI, Fremont, CA (US);

Qingjun Zhou, Sunnyvale, CA (US);

Inventors:

Zhilin Huang, San Jose, CA (US);

Siyi Li, Fremont, CA (US);

Qingjun Zhou, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.


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