The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Aug. 24, 2006
Jacky Huang, Hsin-Chu, TW;
Chin-ming KE, Hsin-Chu, TW;
Tsai-sheng Gau, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods and apparatus for measuring a critical dimension of an optically-anisotropic feature, including extracting a number of values each descriptive of the optically-anisotropic feature, including values corresponding to ordinary and extraordinary measurements of one or more optical characteristics of the optically-anisotropic feature. The optical characteristics can include the index of refraction and/or the extinction coefficient of the optically-anisotropic feature, among others. Additionally, the values can be input into an optical critical dimension (OCD) measurement model, such that the critical dimension can be verified via optical measurement based on the OCD measurement model. The optical measurement of the critical dimension can also be verified via scanning electron microscope (SEM) measurement. Furthermore, the optically-anisotropic feature may have a substantially amorphous composition, such as amorphous carbon, including where the optically-anisotropic feature is that of a hardmask substantially comprising amorphous carbon or otherwise having a substantially amorphous composition.