The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2010

Filed:

Sep. 26, 2007
Applicants:

Claudio Resta, Pavia, IT;

Marco Ferraro, Agrate Brianza, IT;

Ferdinando Bedeschi, Biassono, IT;

Alessandro Cabrini, Agrate Brianza, IT;

Inventors:

Claudio Resta, Pavia, IT;

Marco Ferraro, Agrate Brianza, IT;

Ferdinando Bedeschi, Biassono, IT;

Alessandro Cabrini, Agrate Brianza, IT;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Multilevel phase change memory cells may be programmed forming amorphous regions of amorphous phase change material in a storage region of the phase change memory cell. Crystalline paths of crystalline phase change material are formed through the amorphous regions of amorphous phase change material. Lengths of the crystalline paths are controlled so that at least a first crystalline path has a first length in a first programming state and a second crystalline path has a second length, different from the first length, in a second programming state.


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