The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Dec. 21, 2006
Shih-chang Liu, Yuku Village, TW;
Wen-ting Chu, Kaohsiung County, TW;
Chi-hsin Lo, Zhubei, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Shih-Chang Liu, Yuku Village, TW;
Wen-Ting Chu, Kaohsiung County, TW;
Chi-Hsin Lo, Zhubei, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An improved method for fabricating floating gate structures of flash memory cells having reduced and more uniform forward tunneling voltages. The method may include the steps of: forming at least two floating gates over a substrate; forming a mask over each of the floating gates, each of the masks having a portion, adjacent to a tip of a respective one of the floating gates, of a given thickness, wherein the given thicknesses of the mask portions are different from one another; and etching the masks to reduce the different given thicknesses of the mask portions to a reduced thickness wherein the reduced thickness portions of the mask are of a uniform thickness.