The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2010

Filed:

Dec. 22, 2005
Applicants:

Hsueh-chung Chen, Yonghe, TW;

Chine-gie Lou, Hsinchu Hsien, TW;

Ping-liang Liu, Tainan, TW;

Su-chen Fan, Ping-Jen, TW;

Inventors:

Hsueh-Chung Chen, Yonghe, TW;

Chine-Gie Lou, Hsinchu Hsien, TW;

Ping-Liang Liu, Tainan, TW;

Su-Chen Fan, Ping-Jen, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improved interconnect structure and method of making such a device. The improved interconnect electrically connects two otherwise separate areas on a semiconductor wafer. The interconnect preferably uses a copper conductor disposed within a trench and via structure formed in a low-k hybrid dielectric layer using a dual damascene process. Each contact region is served by a plurality of vias, each in communication with the trench conductor portion. The entry from the trench to the via is rounded for at least one and preferably all of the via structures.


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