The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Sep. 01, 2009
Nobuyoshi Takahashi, Nara, JP;
Satoshi Iwamoto, Toyama, JP;
Fumihiko Noro, Toyama, JP;
Masatoshi Arai, Nara, JP;
Nobuyoshi Takahashi, Nara, JP;
Satoshi Iwamoto, Toyama, JP;
Fumihiko Noro, Toyama, JP;
Masatoshi Arai, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.