The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Apr. 24, 2006
Alexander Paterson, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Theodoros Panagopoulos, San Jose, CA (US);
Brian K. Hatcher, San Jose, CA (US);
Dan Katz, Saratoga, CA (US);
Edward P. Hammond, Iv, Hillsborough, CA (US);
John P. Holland, San Jose, CA (US);
Alexander Matyushkin, San Jose, CA (US);
Alexander Paterson, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Theodoros Panagopoulos, San Jose, CA (US);
Brian K. Hatcher, San Jose, CA (US);
Dan Katz, Saratoga, CA (US);
Edward P. Hammond, IV, Hillsborough, CA (US);
John P. Holland, San Jose, CA (US);
Alexander Matyushkin, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.