The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Dec. 21, 2007
Haichun Yang, Santa Clara, CA (US);
Xinliang LU, Fremont, CA (US);
Chien-teh Kao, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Haichun Yang, Santa Clara, CA (US);
Xinliang Lu, Fremont, CA (US);
Chien-Teh Kao, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH/NFmolar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.