The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Oct. 25, 2002
Ling Chen, Sunnyvale, CA (US);
Vincent Ku, San Jose, CA (US);
Dien-yeh Wu, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Alan Ouye, San Mateo, CA (US);
Norman Nakashima, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Ling Chen, Sunnyvale, CA (US);
Vincent Ku, San Jose, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Hua Chung, San Jose, CA (US);
Alan Ouye, San Mateo, CA (US);
Norman Nakashima, Sunnyvale, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.