The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jan. 23, 2007
Chih-ming KE, Hsinchu, TW;
Shinn-sheng Yu, Hsinchu, TW;
Yu-hsi Wang, Taichung County, TW;
Jacky Huang, Chu-Bei, TW;
Tsai-sheng Gau, Hsinchu, TW;
Kuo-chen Huang, Hsinchu County, TW;
Chih-Ming Ke, Hsinchu, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Yu-Hsi Wang, Taichung County, TW;
Jacky Huang, Chu-Bei, TW;
Tsai-Sheng Gau, Hsinchu, TW;
Kuo-Chen Huang, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method and a system are provided for calibrating metrological tools used to measure features of a semiconductor device. A critical dimension (CD) ruler defines a known pitch plus a pitch offset. A photoresist layer is measured to determine a measured pitch whereupon the measured pitch is compared to the known pitch. From the comparison, appropriate calibration steps can be taken to reduce the difference between the known pitch and the measured pitch.