The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Dec. 30, 2008
Kensuke Ishikawa, Ome, JP;
Tatsuyuki Saito, Ome, JP;
Masanori Miyauchi, Ome, JP;
Toshio Saito, Akiruno, JP;
Hiroshi Ashihara, Ome, JP;
Kensuke Ishikawa, Ome, JP;
Tatsuyuki Saito, Ome, JP;
Masanori Miyauchi, Ome, JP;
Toshio Saito, Akiruno, JP;
Hiroshi Ashihara, Ome, JP;
Renesas Electronics Corp., Tokyo, JP;
Abstract
In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.