The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jul. 13, 2007
Seiji Ogata, Chigasaki, JP;
Hidekazu Yokoo, Susono, JP;
Masasumi Araki, Chigasaki, JP;
ULVAC, Inc., Chigasaki-shi, JP;
Abstract
A control method of an ion implantation device that radiates an ion beam emitted from an ion source via an optical element onto a material to be treated, includes the steps of: measuring the spatial distribution of the ion beam in the vicinity of the material to be treated; estimating the emittance, which is the spatial and angular distribution of the ion beam of the ion source, from the measured spatial distribution, by using an ion beam trajectory calculation method; calculating the operating conditions of the optical element so that the ion beam in the vicinity of the material to be treated has a desired spatial distribution, by using the estimated emittance and the trajectory calculation method; and operating the ion implantation device by using the calculated operating conditions of the optical element.