The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jan. 22, 2008
Kenji Suzuki, Guiderland, NY (US);
Miho Jomen, Watervliet, NY (US);
Jonathan Rullan, Albany, NY (US);
Kenji Suzuki, Guiderland, NY (US);
Miho Jomen, Watervliet, NY (US);
Jonathan Rullan, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for integrating low-temperature selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. The method includes providing a patterned substrate containing a recessed feature in a dielectric layer, where the recessed feature is at least substantially filled with planarized bulk Cu metal, heat-treating the bulk Cu metal and the dielectric layer in the presence of H, N, or NH, or a combination thereof, and selectively depositing a Ru metal film on the heat-treated planarized bulk Cu metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile