The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Nov. 30, 2006
Willy Rachmady, Beaverton, OR (US);
Vijay Ramachandrarao, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Arnel M. Fajardo, Beaverton, OR (US);
Willy Rachmady, Beaverton, OR (US);
Vijay Ramachandrarao, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Arnel M. Fajardo, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A transistor comprises a gate () comprising a gate electrode () and a gate dielectric (), an electrically insulating cap () over the gate, and a source/drain contact () adjacent to the gate. The electrically insulating cap prevents electrical contact between the gate and the source/drain contact. In one embodiment, the electrically insulating cap is formed in a trench () that is self-aligned to the gate and that is created by the removal of a sacrificial cap using an aqueous solution comprising a carboxylic acid and a corrosion inhibitor.